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Transmissive Photosensors (Photo Interrupters)
CNA1006N
Photo Interrupter
Unit : mm
For contactless SW, object detection Overview
CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
2.5
1.5 16.6 11.8 3.0+0.2 -0.3 A
Optical center
(3.8) 1.6
6.0 1.5
Features
Highly precise position detection : 0.3 mm Gap width : 3 mm The type direetly attached to PCB (with positioning pins and fixing hooks)
A' 4-0.45 (7.6) 15.0 12.60.3 2 3
3.5
3.50.5
2-1.5
2
2-o1.0 +0 -0.05
1
2.00.1 2.00.1
Absolute Maximum Ratings (Ta = 25C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 - 30 to +100 Unit V mA mW mA V V mW C C
1 4 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is 0.2 2. ( ) Dimension is reference 3. Fitting strength is 2N min. (Static load)
*1
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC
*2
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.33 mW/C at Ta 25C.
Topr -25 to +85 Tstg
Electrical Characteristics (Ta = 25C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO VR = 3V VCE = 10V 0.7 5 10 Conditions IF = 20mA min typ 1.25 max 1.4 10 200 14 0.4 Unit V A nA mA V s
Collector current IC VCE = 5V, IF = 20mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 40mA, IC = 1mA characteristics Response time tr , tf* VCC = 5V, IC = 1mA, RL = 100
*
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf
,,
,,
50
RL
td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
,,, ,
SEC A-A' (2.54) 2-3.3 3 4 Pin connection
0.50.1
6.5 5.0
Slit width 1.50.1
1
CNA1006N
Transmissive Photosensors (Photo Interrupters)
IF , IC -- Ta
60 60
IF -- VF
1.6 Ta = 25C
VF -- Ta
IF = 50mA
IF , IC (mA)
50
IF
50
IF (mA)
Forward current, collector current
VF (V)
1.2 10mA 1mA 0.8
40
40
30 IC
Forward current
30
20
20
Forward voltage
0 0.4 0.8 1.2 1.6 2.0 2.4
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
10 2 VCE = 5V Ta = 25C 10 2
IC -- VCE
160 Ta = 25C
IC -- Ta
VCE = 5V IF = 20mA
IC (mA)
10
IC (mA)
10
IF = 30mA 20mA 10mA
IC (%) Relative output current
10 2
120
Collector current
1
Collector current
1
80
10 -1
10 -1
40
10 -2 10 -1
1
10
10 2
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 3 VCE = 10V 10 2
tr -- IC
VCC = 5V Ta = 25C 100
IC -- d
VCE = 5V Ta = 25C IF = 20mA
10 2
IC (%)
ICEO (nA)
10
10
Relative output current
100 1
60
Dark current
1
Rise time
40
10 -1 10 -1
Sig.IN Sig. OUT 50
VCC Sig. OUT RL 90% 10%
20
10 -2 - 40 - 20
, ,,
0
20
40
60
80
100
10 -2 10 -1
tr
td
tf
102 0 0 1 2 3 4 5 6
1
10
Ambient temperature Ta (C )
Collector current IC (mA)
Distance d (mm)
2
,,
d
RL = 1k 500
80
Criterion 0
tr (s)

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